Infineon IPB65R310CFD: A High-Performance 650V Superjunction MOSFET for Advanced Power Conversion
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is the Infineon IPB65R310CFD, a 650V Superjunction (SJ) MOSFET engineered to meet the demanding requirements of modern power conversion systems. This device exemplifies the advanced capabilities necessary for applications ranging from server and telecom SMPS (Switch-Mode Power Supplies) to industrial motor drives and renewable energy inverters.
A cornerstone of the IPB65R310CFD's performance is its exceptionally low specific on-state resistance (R DS(on)) of just 31 mΩ (max. at 25°C). This key parameter is crucial for minimizing conduction losses, which directly translates into higher efficiency, especially under high-load conditions. The reduced power dissipation allows for more compact designs by easing thermal management constraints, thereby contributing to a significant increase in overall power density.
The MOSFET is built upon Infineon's proprietary CoolMOS™ CFD7 (CFD7) technology. This seventh-generation superjunction platform is a leap forward, not only in reducing switching and conduction losses but also in integrating a fast body diode with improved reverse recovery characteristics. This feature is particularly vital in bridge topologies like PFC (Power Factor Correction) and half-bridge circuits, where the body diode's reverse recovery charge (Qrr) significantly impacts switching noise and losses. The CFD7 technology ensures softer reverse recovery behavior, leading to lower electromagnetic interference (EMI) and reduced stress on the switching device itself.
Furthermore, the IPB65R310CFD offers superior switching performance. The low gate charge (Q G) and output capacitance (E oss) enable faster switching frequencies. This capability allows designers to shrink the size of passive components like inductors and transformers, which is a critical step toward achieving higher power density in next-generation power supplies. The device also demonstrates robustness and reliability, with a high avalanche ruggedness and an extended safe operating area (SOA), ensuring stable operation under extreme conditions.
Housed in the innovative TOLL (TO-leadless) package, this MOSFET addresses both electrical and mechanical design challenges. The package features a leadframe-based design with exposed top and bottom cooling surfaces. This dual-cooling capability enhances thermal performance by facilitating efficient heat transfer to the PCB or an external heatsink, allowing for higher continuous current handling. Its compact footprint and low profile make it an ideal choice for space-constrained applications.
ICGOOODFIND: The Infineon IPB65R310CFD stands as a benchmark for high-performance 650V power MOSFETs. By masterfully combining ultra-low R DS(on), fast and robust switching characteristics courtesy of CoolMOS™ CFD7 technology, and superior thermal performance in a compact TOLL package, it provides a comprehensive solution for designers aiming to push the limits of efficiency and power density in advanced power conversion systems.
Keywords: Superjunction MOSFET, Power Density, Conduction Losses, CoolMOS™ CFD7, Switching Performance.
