Infineon IRLS3813TRLPBF: Advanced 40V Single N-Channel HEXFET Power MOSFET in D2PAK Package

Power management efficiency is a critical design consideration in modern electronic systems, particularly in automotive, industrial, and power supply applications. The Infineon IRLS3813TRLPBF stands out as a high-performance solution engineered to meet these demanding requirements. This single N-Channel HEXFET Power MOSFET, housed in a robust D2PAK (TO-263) package, is optimized for high-current switching and low power dissipation, making it an ideal choice for a wide range of power conversion tasks.

A key highlight of the IRLS3813TRLPBF is its exceptionally low on-state resistance (RDS(on)) of just 1.0 mΩ (maximal at VGS = 10 V). This ultra-low resistance is instrumental in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. By operating cooler, the device enhances overall reliability and can often simplify thermal management designs, potentially reducing the need for large heatsinks or complex cooling systems.

The device’s 40V drain-source voltage (VDS) rating makes it exceptionally well-suited for 24V automotive and industrial systems, providing a comfortable margin for handling voltage spikes and transients common in these harsh electrical environments. This robustness is further reinforced by its qualification for automotive applications, ensuring it meets stringent quality and reliability standards.

Encased in the industry-standard D2PAK surface-mount package, the IRLS3813TRLPBF offers an excellent balance between power handling capability and board space efficiency. The package is designed for effective power dissipation, featuring a large metal tab that can be directly attached to a PCB copper area to act as a heatsink. This makes it a versatile component for designing compact yet powerful modules for switch-mode power supplies (SMPS), motor control circuits, and high-power DC-DC converters.

In summary, the Infineon IRLS3813TRLPBF is a superior power MOSFET that delivers a combination of high efficiency, robustness, and power density. Its ultra-low RDS(on), high current capability, and automotive-grade durability make it a compelling component for engineers focused on optimizing performance and reliability in power-sensitive designs.

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Keywords: Low RDS(on), HEXFET Technology, D2PAK Package, Automotive Grade, High Current Switching.