Infineon BSV236SP NPN Silicon Transistor: Datasheet, Pinout, and Application Circuits
The Infineon BSV236SP is a high-performance NPN silicon planar epitaxial transistor designed for high-speed switching and amplification applications. Encapsulated in a compact SOT-23 surface-mount package, it is optimized for use in low-power, high-frequency circuits such as those found in communication devices, signal processing systems, and various portable electronics. Its combination of high current gain, low saturation voltage, and excellent frequency response makes it a versatile component for modern electronic design.
Datasheet Overview and Key Specifications
A thorough review of the BSV236SP datasheet reveals its electrical characteristics and absolute maximum ratings, which are critical for reliable circuit design.
Collector-Emitter Voltage (VCE): 12 V
Collector Current (IC): 100 mA
Total Power Dissipation (Ptot): 250 mW
DC Current Gain (hFE): Typically 120 to 280 at IC=2 mA, VCE=5 V
Transition Frequency (fT): 250 MHz (min), enabling its use in RF and high-speed switching scenarios.
Collector-Emitter Saturation Voltage (VCE(sat)): A low 0.2 V (max) at IC=10 mA, IB=1 mA, which minimizes power loss in switching applications.
Pinout Configuration
The BSV236SP comes in a SOT-23 package with three pins. When viewing the flat side of the component with the pins facing downward, the pinout is as follows:
Pin 1 (Emitter - E): This is the source of electrons.
Pin 2 (Base - B): This is the control terminal that activates the transistor.
Pin 3 (Collector - C): This is the terminal that collects the electrons.
Application Circuits
The BSV236SP is commonly employed in two fundamental configurations: as a switch and as an amplifier.
1. High-Speed Switching Circuit
One of the primary uses of the BSV236SP is as a high-speed switch to control loads like LEDs, relays, or motors. A simple switch circuit involves connecting a current-limiting resistor between a microcontroller's GPIO pin and the transistor's Base (B). The load (e.g., an LED with a series resistor) is connected between the positive supply and the Collector (C). The Emitter (E) is connected to ground. When a small current is applied to the base (typically > IC / hFE), the transistor saturates, acting as a closed switch and allowing a much larger current to flow from Collector to Emitter, thereby powering the load. Its low VCE(sat) ensures minimal voltage drop across the transistor.
2. Common-Emitter Amplifier
For small-signal amplification, such as in audio pre-amplifiers or sensor signal conditioning, the BSV236SP can be configured in a common-emitter amplifier circuit. This setup provides significant voltage gain. The circuit requires a voltage divider network at the base to set the DC bias point (Q-point), an emitter resistor for stability, and a collector resistor where the amplified output voltage is developed. The high transition frequency (fT) of the BSV236SP allows it to amplify signals well into the VHF band.
The Infineon BSV236SP stands out as a highly reliable and efficient SMD transistor, offering an optimal balance of high-speed switching, low saturation voltage, and substantial current gain. Its compact SOT-23 package makes it ideal for space-constrained PCB designs across a wide array of consumer and industrial electronics. For designers seeking a robust general-purpose NPN transistor, the BSV236SP is a superior choice.
Keywords: NPN Transistor, SOT-23, High-Speed Switching, Low Saturation Voltage, Amplifier Circuit
