Infineon SPA11N80C3XKSA1 CoolMOS™ Power MOSFET: Datasheet, Application Circuit, and Key Features

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this innovation is Infineon's CoolMOS™ family, with the SPA11N80C3XKSA1 standing out as a prime example of a high-performance Power MOSFET engineered for demanding applications. This article delves into the key specifications, typical use cases, and the defining features of this advanced component.

Key Features and Benefits

The SPA11N80C3XKSA1 is built upon Infineon's proprietary Super Junction (SJ) technology, which is the cornerstone of the CoolMOS™ series. This technology fundamentally redefines the relationship between on-state resistance (RDS(on)) and breakdown voltage, offering a significant improvement over traditional planar MOSFETs.

Its standout features include:

High Breakdown Voltage (800 V): This makes it exceptionally suitable for operations directly from rectified mains voltages in regions up to 230 VAC and even beyond, providing a robust safety margin against voltage spikes and transients.

Low On-State Resistance (RDS(on)): At just 0.38 Ω (max. @ VGS = 10 V), the low RDS(on) minimizes conduction losses. This directly translates into higher efficiency, as less power is wasted as heat during the on-state.

Exceptional Switching Performance: The device exhibits low gate charge (QG) and low effective output capacitance (COSS(eff)). These characteristics are critical for achieving high switching frequencies, which allows for the design of smaller, more compact magnetic components (transformers and inductors) and filters.

Integrated Fast Body Diode: The intrinsic diode features good reverse recovery characteristics, enhancing its ruggedness in hard-switching and inductive load applications.

Datasheet Overview

The datasheet for the SPA11N80C3XKSA1 is the ultimate source of information for a design engineer. Key parameters to review include:

Absolute Maximum Ratings: Defining the operational boundaries for drain-source voltage (VDS), gate-source voltage (VGS), continuous and pulsed drain current (ID, IDM), and maximum junction temperature.

Electrical Characteristics: Detailed tables containing RDS(on), gate threshold voltage (VGS(th)), and various capacitance values (Ciss, Coss, Crss) under specified test conditions.

Switching Characteristics: Graphs and test data showing turn-on, turn-off, and reverse recovery times.

Safe Operating Area (SOA): Diagrams illustrating the combinations of drain current and drain-source voltage within which the device can operate safely without being damaged.

Typical Application Circuit

A primary application for the SPA11N80C3XKSA1 is in switch-mode power supplies (SMPS), particularly in the power factor correction (PFC) stage. The following illustrates a simplified schematic of a classic Boost PFC converter, a topology where this MOSFET excels.

[Placeholder for Boost PFC Circuit Diagram]

Description:

The AC input is rectified by a bridge rectifier.

The SPA11N80C3XKSA1 (Q1) acts as the main switching element, controlled by a dedicated PFC controller IC.

The inductor (L1) stores energy when Q1 is on and releases it to the output when Q1 is off.

The diode (D1) prevents reverse current flow.

The output capacitor (Cout) filters the high-voltage DC output.

In this circuit, the MOSFET's high voltage rating handles the boosted output voltage (typically around 400 VDC), while its low RDS(on) and fast switching capability are essential for achieving high efficiency across the entire load range.

ICGOOODFIND

The Infineon SPA11N80C3XKSA1 CoolMOS™ Power MOSFET is a superior component that effectively balances high voltage capability with low losses. Its superior switching performance and high efficiency make it an ideal choice for high-density power supplies, including server PSUs, industrial motor drives, lighting ballasts, and solar inverters. By enabling designs that are both smaller and cooler, it provides a critical advantage in today's competitive electronics market.

Keywords:

1. Super Junction (SJ) Technology

2. High Breakdown Voltage (800V)

3. Low On-State Resistance (RDS(on))

4. Power Factor Correction (PFC)

5. Fast Switching Performance