Infineon IPT004N03LATMA1 OptiMOS 3 Power MOSFET: Datasheet, Features, and Applications

The Infineon IPT004N03LATMA1 is a benchmark N-channel power MOSFET from the renowned OptiMOS 3 family. Engineered for exceptional efficiency and robustness in power conversion applications, this device sets a high standard for performance in a compact, low-profile package. This article delves into its key specifications, standout features, and primary use cases.

Datasheet Overview and Key Specifications

The IPT004N03LATMA1 is built on Infineon’s advanced trench technology. As a logic-level MOSFET, it is characterized by an ultra-low maximum gate-threshold voltage, making it fully compatible with 3.3V and 5V microcontroller outputs without requiring a dedicated driver IC.

Its core electrical parameters include:

Drain-Source Voltage (VDS): 30 V

Continuous Drain Current (ID): 140 A at 25°C case temperature

Low On-Resistance (RDS(on)): 0.98 mΩ maximum at VGS = 10 V

Low Gate Charge (QG): 78 nC typical, enabling fast switching speeds and reduced driving losses

The component is offered in the SuperSO8 (LFPAK) package, which provides an excellent thermal performance-to-footprint ratio, crucial for space-constrained PCB designs.

Salient Features and Benefits

The combination of its electrical characteristics translates into several significant advantages for designers:

Highest Efficiency: The extremely low RDS(on) minimizes conduction losses, while the low gate charge reduces switching losses. This synergy is critical for achieving peak efficiency in high-frequency switching applications.

Enhanced Power Density: The ability to handle high currents with minimal losses in the compact SuperSO8 package allows engineers to design more powerful systems in smaller form factors.

Improved Thermal Performance: The package features an exposed thermal pad that efficiently transfers heat from the die to the PCB, enhancing reliability and allowing for higher continuous output power.

High Robustness: This MOSFET offers an excellent figure-of-merit (FOM) and is designed for high reliability under demanding operating conditions.

Primary Applications

The IPT004N03LATMA1 is ideally suited for a wide range of DC-DC conversion and power management tasks, including:

Synchronous Rectification in switch-mode power supplies (SMPS) and DC-DC converters.

Voltage Regulation Modules (VRM) and point-of-load (POL) converters for servers, telecom, and computing hardware.

Motor Control and Driving in automotive systems, industrial automation, and robotics.

Battery Management Systems (BMS) for discharge control and protection circuits.

High-Current Switching in power tools and inverters.

ICGOODFIND Summary

The Infineon IPT004N03LATMA1 OptiMOS 3 MOSFET stands out as a superior solution for designers seeking to maximize efficiency and power density. Its industry-leading low on-resistance, logic-level drive capability, and excellent thermal performance in a small package make it an optimal choice for modern, high-performance power electronics applications from computing to automotive systems.

Keywords:

1. OptiMOS 3

2. Low On-Resistance

3. Logic-Level MOSFET

4. Power Efficiency

5. SuperSO8 Package