Infineon IPW60R060C7 CoolMOS™ P7 Power Transistor: Datasheet, Application Notes, and Key Features
The relentless pursuit of higher efficiency, power density, and reliability in power electronics is driven by innovations in semiconductor technology. At the forefront of this evolution is Infineon's CoolMOS™ P7 series, with the IPW60R060C7 standing out as a benchmark in superjunction MOSFETs for high-performance applications. This article delves into the key features, supported by its datasheet and application notes, that make this component a preferred choice for designers.
Key Features and Performance Advantages
The IPW60R060C7 is engineered to deliver exceptional switching performance and minimal losses. Its standout characteristic is its ultra-low on-state resistance (RDS(on)) of just 60 mΩ (max) at a drain-source voltage (VDS) of 650 V. This low resistance directly translates to reduced conduction losses, enabling higher efficiency, especially in high-current applications.
Building upon the proven superjunction (SJ) technology, the CoolMOS™ P7 generation incorporates significant advancements. It features an integrated fast body diode with excellent reverse recovery characteristics. This hardens the switch against rugged operating conditions and is crucial for circuits like power factor correction (PFC) and bridge topologies where the body diode conducts. Furthermore, the P7 technology boasts superior switching behavior, with optimized internal capacitances (Ciss, Coss, Crss). This results in lower switching losses, reduced electromagnetic interference (EMI), and allows for higher switching frequencies. Operating at higher frequencies enables the use of smaller passive components like inductors and transformers, significantly increasing the overall power density of the end system.
The component is offered in the TO-247 package, a industry-standard housing that provides excellent thermal performance and mechanical robustness, making it suitable for demanding environments.
Datasheet Insights
The official datasheet for the IPW60R060C7 is the primary source for all critical parameters necessary for a robust design. Key specifications include:
Drain-Source Voltage (VDS): 650 V
Continuous Drain Current (ID): 18 A at 100°C
On-State Resistance (RDS(on)): 60 mΩ (max) @ VGS = 10 V, TJ = 25°C
Gate-Source Voltage (VGS): ±20 V (max)
Total Gate Charge (Qg): 46 nC (typ)
The datasheet also provides detailed graphs on switching times, capacitance values, and safe operating areas (SOA), which are indispensable for simulating and validating circuit performance.
Application Notes and Typical Use Cases
Infineon's extensive application notes provide invaluable guidance for implementing the IPW60R060C7. These documents cover layout recommendations for minimizing parasitic inductance, gate driving techniques to optimize switching speed and avoid oscillations, and thermal management strategies.
This MOSFET is ideally suited for a wide range of high-power switch-mode applications, including:
Server & Telecom Power Supplies (SMPS): Particularly in PFC stages and DC-DC converters.
Industrial Power Systems: For motor drives, welding equipment, and UPS systems.
Solar Inverters: In the booster and inverter stages.
Charging Infrastructure: For electric vehicle (EV) chargers.
ICGOODFIND Summary
The Infineon IPW60R060C7 CoolMOS™ P7 represents a peak in high-voltage MOSFET technology, offering a compelling blend of ultra-low conduction losses, fast and robust switching performance, and high reliability. Its optimized characteristics make it an ideal solution for designers aiming to push the boundaries of efficiency and power density in modern power conversion systems.
Keywords: CoolMOS P7, Superjunction MOSFET, High-Efficiency, Power Density, 650V
